Samsung MZ-V9S1T0, 1 TB, M.2, 7150 MB/s

Tekniset tiedot

Average power consumption (read)

4.3 W

Average power consumption (write)

4.2 W

Component for

PC

Depth

2.38 mm

DevSlp (device sleep) support

Yes

Hardware encryption

Yes

Height

80.2 mm

Interface

PCI Express 4.0

Kapasiteetti

1TB

M.2 SSD size

2280 (22 x 80 mm)

Mallinumero

MZV9S1T0BW

Mean time between failures (MTBF)

1500000 h

Memory type

V-NAND TLC

NVMe

Yes

NVMe version

2.0

Operating shock

1500 G

Operating temperature (T-T)

0 - 70 °C

Operating voltage

3.3 V

Package depth

100 mm

Package height

24 mm

Package weight

68 g

Package width

145 mm

Power consumption (idle)

0.06 W

Power consumption (read)

4.3 W

Power consumption (write)

4.2 W

Power consumption DevSlp (device sleep)

5 mW

Random read (4KB)

850000 IOPS

Random write (4KB)

1350000 IOPS

Read speed

7150 MB/s

S.M.A.R.T. support

Yes

Security algorithms

256-bit AES

SSD capacity

1 TB

SSD form factor

M.2

TRIM support

Yes

Weight

9 g

Width

80.2 mm

Write speed

6300 MB/s

EAN / GTIN

8806095575674